1 AM2314N analog power july, 2004 - rev. a preliminary publication order number: ds-am2314_e these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are power switch, power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. v ds (v) r ds(on) ( ? )i d (a) 0.032 @ v gs = 4.5 v 4.6 0.044 @ v gs = 2.5v 3.9 product summary 20 n-channel 20v (d-s) mosfet ?low r ds(on) provides higher efficiency and extends battery life ? low gate charge ? fast switch ? miniature sot-23 surface mount package saves board space notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol maximum units v ds 20 v gs 12 t a =25 o c4.0 t a =70 o c3.1 i dm 20 i s 1.6 a t a =25 o c1.3 t a =70 o c0.8 t j , t stg -55 to 150 o c continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parame te r pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w symbol maximum units t <= 5 sec 100 steady-state 166 thermal resistance ratings parame te r o c/w maximum junction-to-ambient a r thja d s g
2 AM2314N analog power july, 2004 - rev. a preliminary publication order number: ds-am2314_e notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. analog power (apl) reserves the right to make changes without further notic e to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does apl assume any liability arising ou t of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, conseque ntial or incidental damages. ?typical? parameters which may be provided in apl data sheet s and/or specifications can a nd do vary in different appli cations and actual performance may vary over time. all operating parameters , including ?typicals? must be validated for each customer appl ication by customer?s technical experts. apl does not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications int ended to support or sustain life, or for any other application in which the failure of the apl product could create a situation where personal inju ry or death may occur. should buyer purchase or use apl products for any such uninte nded or unauthorized application, buyer shall indemnify and hold a pl and its officers, employees, subsidiari es, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirect ly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that apl was negligent regarding the design or m anufacture of the part. apl is an equal opportunity/affirmative action employer. min typ max gate-threshold voltage v gs ( th ) v ds = v gs , i d = 250 ua 0.7 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = 16 v, v gs = 0 v 1 v ds = 16 v, v gs = 0 v, t j = 55 o c 10 on-state drain current a i d ( on ) v ds = 5 v, v gs = 4.5 v 10 a v gs = 4.5 v, i d = 4.6 a 32 v gs = 2.5 v, i d = 3.9 a 44 forward tranconductance a g fs v ds = 10 v, i d = 4.0 a 11.3 s diode forward voltage v sd i s = 1.6 a, v gs = 0 v 0.75 v total gate charge q g 13.4 gate-source charge q g s 0.9 gate-drain charge q gd 2.0 turn-on delay time t d ( on ) 8 rise time t r 24 turn-off delay time t d ( off ) 35 fall-time t f 10 source-ddrain reverse recovery time t rr i f = 1.6 a, di/dt = 100 a/us 40 m ? parameter limits unit v dd = 10 v, r l = 15 ? , i d = 1 a, v gen = 4.5 v v ds = 10 v, v gs = 4.5 v, i d = 4.0 a nc ns dynamic b specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static test conditions symbol drain-source on-resistance a r ds(on)
3 AM2314N analog power july, 2004 - rev. a preliminary publication order number: ds-am2314_e typical electrical characteristics (n-channel) figure 3. on-resistance vs. drain current figure 5. gate charge figure 2. transfer characteristics figure 4. capacitance figure 6. on-resistance vs. junction temperature figure 1. output characteristics 0 5 10 15 20 25 30 00.511.522.53 v ds , drain-source voltage (v) i d , drain current ( a 3.0v 3.5v 2.5v 2.0v v gs = 4.5v 0 5 10 15 20 25 30 0.511.522.53 v gs , gate to source voltage (v) i d , drain current ( a t a = -55 o c 25 o c 125 o c 0.5 1 1.5 2 2.5 0 5 10 15 20 25 30 i d , drain current (a) r ds(on) , normalized drain-source on-resistan c 4.5v 2.5v 0 300 600 900 1200 1500 1800 0 4 8 121620 v ds , drain to source voltage (v) capacitance (p f c iss c rss c oss 0 2 4 6 8 10 036912 qg, gate charge (nc) vgs voltage ( v ) 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistan c
4 AM2314N analog power july, 2004 - rev. a preliminary publication order number: ds-am2314_e typical electrical characteristics (n-channel) figure 11. normalized thermal transient impedance, junction-to-ambient figure 8. on-resistance vs. gate-to-source voltage figure 10. single pulse power figure 9. threshold voltage figure 7. source-drain diode forward voltage 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , body diode forw ard voltage (v) i s , reverse drain current ( t a = 125 o c 25 o c 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 12345 v gs , gate to source voltage (v) r ds(on) , on-resistance (oh m 0.2 0.4 0.6 0.8 1 1.2 -50 -25 0 25 50 75 100 125 150 t a , ambient temperature ( o c) v th , gate-source threstho l voltage (v) i d = 250 a 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 t 1 , time (sec) p(pk), peak transient power (w) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), no rm ali zed effecti ve transi ent therm al resi st an single puls e 0.01 0.02 0.05 0.1 0.2 d = 0.5
5 AM2314N analog power july, 2004 - rev. a preliminary publication order number: ds-am2314_e package information
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